最近,课题组论文《Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane》被ACS 旗下的 ACS Applied Materials & Interfaces (2016, 8(33), 21770-21775 )杂志正式接收。
论文链接http://pubs.acs.org/doi/abs/10.1021/acsami.6b05167
Flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration.
本工作受到973课题、国家自然科学基金、宁波市创新团队、中科院交叉创新团队、中科院青年创新促进会等项目的支持。